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机译:低于十纳米工艺节点的具有量子机械漂移扩散模型的多晶硅无结鳍式沟道FET设计
Department of Electronics Engineering, Graduate School of IT Convergence Engineering, Gachon University, Seongnam, South Korea;
Department of Electronics Engineering, Graduate School of IT Convergence Engineering, Gachon University, Seongnam, South Korea;
Department of Electronics Engineering, Graduate School of IT Convergence Engineering, Gachon University, Seongnam, South Korea;
FinFETs; Field effect transistors; Silicon; Semiconductor device modeling; CMOS technology; Substrates; Doping;
机译:SUS-15 NM技术节点SOI和SELBOX连接FINFET的设计与分析
机译:使用肖特基金属芯的新出现纳米线连接FET的亚10-nm可扩展性
机译:子5 nm技术节点的无连接门 - 全围绕垂直堆叠纳米线FET的特征与优化
机译:10纳米以下技术节点的碳纳米管场效应晶体管的紧凑建模和设计优化
机译:基于较低技术节点(7nm)的不同FINFET的静态随机存取存储器设计
机译:量子机械过渡 - 状态模型与机器学习相结合提供了用于选择性Cr烯烃低聚的催化剂设计特征
机译:负电容双栅极连接FETS:一种基于电荷的摆动建模调查,过驱动和短信道效应