Comparative simulation of TriGate and FinFET on SOI: Evaluating a multiple threshold voltage strategy on triple gate devices

摘要

This study highlights the behavior of triple gate SOI transistors on thin BOx. Simulated in 3D TCAD, TriGate and FinFET structures are evaluated with scaled EOT of 0.82nm, proposed for 10nm technology node. Due to a good compromise of channel control by the gate and back-biasing through ultra-thin BOx, TriGate FETs can combine excellent electrostatics with sufficient body-factor (BF), unlike FinFETs. To be fully efficient, a multi-Vt strategy by back-biasing technique on TriGate needs no BOx recess and ultra-thin BOx of 10nm. In these conditions and at gate length L=15nm, back-biasing on TriGate could allow ×1.3 ION and /16 IOFF performance.