Design and modelling of a double gate bilayer graphene field effect transistor

摘要

This paper presents design and computational investigation of a double gate bilayer graphene field effect transistor (GFET) based on the self consistent solution of the Poisson, continuity and energy balance equations (PADRE). The investigation considers the quantum transport at the nanoscale dimension. A set of performance characteristics including charge distribution, bandgap energy, I-V characteristics, electrostatic potential distribution, on/off current ratio and transconductance are considered. In addition, the behavior of the GFET is compared against that of the conventional Si-FET. Owing to its high carrier mobility and saturation velocity, the GFET shows improved performance characteristics over the Si-FET.