Wettability analysis on platinum deposited wafer after reactive ion ecthing using SF6#x002B;Argon gaseous

摘要

This paper studies the factors that affect the wettability in terms of contact angle on a Platinum deposited wafer after reactive ion etching (RIE) using a combination of SF6 and Argon gaseous. A total of three controllable process variables, with 8 sets of experiments were scrutinized using a systematically designed design of experiment (DOE). The three variables in the investigation are ICP power, Bias power, and working pressure. The estimate of the effect calculated for ICP power, Bias power, and working pressure are 18.5, −2.5, and −10.5 respectively. It can be concluded that for Platinum deposited wafer etched using SF6+Argon gaseous, the most significant factor is ICP power. Moreover, the contact angle is inversly proportional to the bias power and working pressure although the slope for working pressure is steeper than that of bias power. Lastly, all the experiments produced the contact angle greater than 90° and are categorized as hydrophobic.