Effect of non-parabolic band structure on quantum confined electronic states in 4H-SiC inversion layers

摘要

We calculate two dimensional electronic states in 4H-SiC inversion layers based on empirical pseudopotential approach, and the nonparabolicity effects on the quantum confinement are discussed. It is shown that the in-plane effective mass for electrons significantly increases under the strong confinement conditions in the case of (0001) oriented substrate, eventually causing the degradation of the inversion layer mobility.