首页> 外文会议>Symposium on VLSI Technology >Top-pinned perpendicular MTJ structure with a counter bias magnetic field layer for suppressing a stray-field in highly scalable STT-MRAM
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Top-pinned perpendicular MTJ structure with a counter bias magnetic field layer for suppressing a stray-field in highly scalable STT-MRAM

机译:具有反偏置磁场层的顶部固定垂直MTJ结构,用于抑制高度可扩展的STT-MRAM中的杂散场

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摘要

We propose a new top-pinned perpendicular MTJ structure that can both achieve the magnetic stability of a pinned layer and reduce a magnetic stray-field to a free layer. The key point of the structure is that there is a large design margin of a pin configuration for the stray-field reduction due to a counter bias magnetic field layer being used instead of a SAF structure. Stable switching performances were successfully obtained without application of an external magnetic field in our 50nmF or less MTJs.
机译:我们提出了一种新的顶部钉扎垂直MTJ结构,该结构既可以实现钉扎层的磁稳定性,又可以将杂散磁场减小到自由层。该结构的关键点在于,由于使用了反向偏置磁场层来代替SAF结构,因此用于减小杂散场的引脚配置具有很大的设计余量。成功地获得了稳定的开关性能,而无需在我们的50nmF或更小的MTJ中施加外部磁场。

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