22nm FD-SOI Technology with Back-biasing Capability Offers Excellent Performance for Enabling Efficient, Ultra-low Power Analog and RF/Millimeter-Wave Designs

摘要

This paper addresses the impact of back-gate biasing to DC, RF/millimeter-Wave (mmWave) and high frequency (HF) noise in 22nm FD-SOI technology (GLOBALFOUNDRIES' 22FDX? technology). The front-gate and the back-gate cut-off frequency fT, together with the maximum oscillation frequency fMAX, were extracted from the four-port S-parameters data. The maximum achieved front-gate/back-gate fT and fMAX for the NFET is 350/85 GHz and 370/23 GHz respectively. In addition, 22FDX? technology demonstrated a tuneable HF noise parameter by using the back-gate biasing to achieve best-in-class low noise level. Two front-end (FE) modules were presented, which exploit the unique feature of back-gate. This unique feature allows superior designs with excellent combination of performance, power consumption and development cost, for emerging applications such as IoT, Telecommunication UE, RF and mmWave circuits with high speed connectivity and networking.