Fully Integrated Dual-Band Power Amplifiers with on-chip Baluns in 65nm CMOS for an 802.11n MIMO WLAN SoC

摘要

Fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are presented. With a 3.3v supply, the PAs produce a saturated output power of 28.3dBm and 26.7dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4GHz and 5GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25dB is achieved at 22.4dBm for the 2.4GHz band and 20.5dBm for the 5GHz band while transmitting 54Mbs OFDM. The chip is fabricated in standard 65nm CMOS and the PAs occupy 0.31mm{sup}2 (2.4G) and 0.27mm{sup}2 (5G) area.