A 65nm CMOS 30dBm class-E RF power amplifier with 60 power added efficiency

机译：65nm CMOS 30DBM Class-E RF功率放大器，功率增加60％

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A 30 dBm single-ended class-E RF power amplifier (PA) is fabricated in 65 nm CMOS technology. The PA is a cascode stage formed by a standard thin-oxide device and a high voltage extended-drain thick-oxide device. Both devices are implemented in a standard

机译：在65nm CMOS技术中制造了30 dBm单端Class-E RF功率放大器（PA）。 PA是由标准薄氧化物装置和高压延伸型厚氧化物装置形成的共源阶段。两个设备都以标准实现

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《IEEE Radio Frequency Integrated Circuits Symposium》|2008年||共4页
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Apostolidou M.; van der Heijden M.P.; Leenaerts D.M.W.; Sonsky J.; Heringa A.; Volokhine I.;
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中图分类 TN45-53;
关键词
CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; CMOS technology; Class E RF power amplifier; cascode stage; frequency 2 GHz; power added efficiency; power-added efficiency; self-biasing; size 65 nm; CMOS PA; HV device; PAE; cascode; class-E; dri;

机译：CMOS集成电路;UHF集成电路;UHF功率放大器;CMOS技术;E级RF功率放大器;CASCODE级;频率2 GHz;功率增加效率;加电效率;自偏置;尺寸65nm;CMOS PA;HV设备;pae;cascode;class-e;dri;

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1. A 29.5 dBm Class-E Outphasing RF Power Amplifier With Efficiency and Output Power Enhancement Circuits in 45nm CMOS [J] . Aritra Banerjee, Rahmi Hezar, Lei Ding, IEEE transactions on circuits and systems . I , Regular papers . 2017,第8期

机译：具有45nm CMOS效率和输出功率增强电路的29.5 dBm E类同相RF功率放大器
2. Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers [J] . Hung-Lung Tu S., Toumazou C. IEEE Transactions on Circuits and Systems. 1 . 1999,第5期

机译：负载质量因数对CMOS E类RF调谐功率放大器的功率效率的影响
3. A Novel Fully Differential CMOS Class-E Power Amplifier with Higher Output Power and Efficiency for IoT Application [J] . Ghorbani A. R., Ghaznavi-Ghoushchi M. B. Wireless personal communications: An Internaional Journal . 2017,第2期

机译：一种新型全差分CMOS Class-E功率放大器，具有较高的输出功率和IOT应用效率
4. A 65nm CMOS 30dBm class-E RF power amplifier with 60 power added efficiency [C] . Apostolidou M., van der Heijden M.P., Leenaerts D.M.W., IEEE Radio Frequency Integrated Circuits Symposium . 2008

机译：65nm CMOS 30DBM Class-E RF功率放大器，功率增加60％
5. Optimized class-E RF power amplifier design in bulk CMOS. [D] . Wang, Tao. 2007

机译：批量CMOS中经过优化的E类RF功率放大器设计。
6. Transcutaneous RF-Powered Implantable Minipump Driven by a Class-E Transmitter [O] . William H. Moore, Daniel P. Holschneider, Tina K. Givrad, -1

机译：由E类发射机驱动的经皮射频供电的可植入微型泵
7. A 5-GHz Class-E Power Amplifier with an Inverse Class-B Driver on 65nm CMOS [O] . Love Matthew, Decle Colin Daniel, Thian Mury 2017

机译：具有65nm CMOS的反向B类驱动器的5 GHz E类功率放大器

A 65nm CMOS 30dBm class-E RF power amplifier with 60 power added efficiency

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