Monolithic 3D SRAM Cell with Stacked Two-Dimensional Materials based FETs at 2nm Node

摘要

Continued scaling of the interconnect geometry increases the metal resistance which degrades the performance of SRAM in advanced technology nodes. We propose an energy-efficient multi-tiers monolithic 3D (M3D) SRAM cell design with stacked 2D material nanosheet FETs to release the impact of metal line resistance. Considering the 2nm node design rules, the 3-tier M3D SRAM cell with stacked MoS2 FETs shows a 42% reduction in cell area, 49% improvement in read access time, and 68% improvement in energy-delay product. The energy- and area-efficient high-performance 3-tier M3D SRAM cell enables intelligent functionalities for the area and energy-constrained edge computing devices.