Source/drain series resistance induced feedback effect on drain current mismatch and its implication

摘要

We have reported and modeled a new source/drain series resistance induced feedback effect on the drain current mismatch of aggressively scaled MOSFETs. This feedback effect needs to be considered when one-to-one comparisons between Si and high-mobility channel (e.g., Ge) devices regarding intrinsic drain current variability are made.