Study on ESD Protection Design with Stacked Low-Voltage Devices for High-Voltage Applications

摘要

ESD protection with stacked low-voltage (LV) devices are proposed to form an area-efficient design for high-voltage (HV) applications in a 0.25-μm HV BCD process. By using the stacked configuration, the LV devices can provide scalable triggering voltage (V_(t1)) and holding voltage (V_h) for various HV applications. Experimental results in silicon chip have verified that the stacked LV devices can exhibit a higher ESD robustness per unit layout area as comparing to the ESD clamp circuit with HV device.