Reliability of graphene interconnects and n-type doping of carbon nanotube transistors

摘要

Graphene and carbon nanotubes (CNTs) have gained significant attention due to their potential applications in high performance electronics. In order to replace or integrate the current silicon based technology with carbon based electronics one should study the reliability of those devices to understand the feasibility of their applications. In this report we present the reliability of CVD synthesized graphene for transistor interconnects and also investigate the reliability of a metal-oxide based CNT doping technique that is an active area of research in the current CNT community.