Error-prediction analyses in 1X, 2X and 3Xnm NAND flash memories for system-level reliability improvement of solid-state drives (SSDs)

摘要

The system-level reliability of solid-state drives (SSDs) is investigated with 1X, 2X and 3Xnm NAND flash memories. The reliability degradation of NAND with scaling is an serious issue. Advanced ECC with signal processing such as error-prediction low-density parity-check (EP-LDPC) and error recovery (ER) scheme will be needed in the future SSDs. In this paper, the NAND reliability information used for EP-LDPC and ER is examined. System-level reliability with conventional ECC and EP-LDPC is measured.