A comprehensive AC / DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence

摘要

A comprehensive NBTI framework using the H/H2 RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments. The framework is validated against experimental data from different DC stress and recovery conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG devices having different gate insulator processes. Limitations of the alternative 2 stage model framework is discussed.