Modeling the Effects of Varying the Capacitance, Resistance, Temperature, and Frequency Dependence for HTS Josephson Junctions, DC SQUIDs and DC bi-SQUIDS.

摘要

The objective of this research was to explore the effects of altering the third junction in an array of bi-superconducting quantum interference devices (bi-SQUIDs) on the overall performance characteristics. The third junction could be altered by either fabricating it using a different method, such as ion beam milling or ion damage, or with junctions specifically designed to exploit certain properties, as with multiferroic junctions. Based on the results of this study, we determined that a modification to the third junction is a viable approach to introduce a desired frequency dependence and/or control of the linearity and voltage swing of the anti-peak. This study, while extensive, was by no means exhaustive, and a significant amount of work remains to fully examine the different effects.