首页> 外文会议>China Semiconductor Technology International Conference >CMP pad surface uniformity optimization after polish
【24h】

CMP pad surface uniformity optimization after polish

机译:CMP垫表面均匀性优化抛光后

获取原文
获取外文期刊封面目录资料

摘要

Aiming at CMP (Chemical Mechanical Polisher) pad thickness uniformity optimization and pad lifetime extension, we performed optimal design to do experiments finding the optimal process condition. We obtained much longer using time of pad and better pad uniformity on CMP tool from wafer stay time distribution on pad by zone. Base on the results of DOE (Design of Experiment), we get the best setting of stay time ratio by zone for optimal pad thickness uniformity is 18%/ 20% (zone1/ zone10). Also we estimated a mechanism of pad thickness uniformity maintenance after polish in CMP process.
机译:旨在CMP(化学机械抛光机)垫厚度均匀优化和垫寿命延伸,我们进行了最佳设计,可以进行实验找到最佳过程条件。我们使用垫上的CMP工具上的焊盘时间和更好的垫均匀性获得了更长的时间。基于DOE的结果(实验设计),我们通过区域获得最佳停留时间比的设置,以获得最佳焊盘厚度均匀性为18 %/ 20 %(ZONE1 / ZONE10)。此外,我们估计了CMP工艺中抛光后焊盘厚度均匀性维持的机制。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号