Efficient multi-bit SRAMS using nanostructures field-effect transistors (NANO-FETS)

摘要

This paper presents emerging quantum dot (QDs) and quantum wells (QWs) field-effect transistors (FETs) where nanotechnology is integrated for 2-bit static random access memory (SRAM) cells and multiple valued logic (MVL) circuits. As feature sizes have started to approach sub-7 nm regime, several issues have begun to make further miniaturization difficult. We present n-channel QDs gate/channel and n-channel QWs spatial wave-function switching FETs. Unlike conventional MOSFET (metal-oxide semiconductor field-effect transistor) which can process 1-bit at a time, the QDs and wells FETs can process 2-bits and potentially implement multi-valued logic and reduce device count.