Remarkable improved photoelectric performance of SnS2 field-effect transistor with Au plasmonic nanostructures

摘要

The development of photoelectric devices for high integration and miniaturization in the semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS2 nanosheets have an evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by their atomic-layer thickness. Here, we report a convenient and simple method to dramatically enhance the electrical and photoelectric performance of the SnS2 flake. By integrating SnS2 with Au plasmonic nanostructures, the photocurrent (I-ph) increased by over 20 times. The corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by similar to 2200%, 2200% and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS2 field-effect transistor (FET) at 532 nm are 1125.9 A W-1 and 2.12 x 10(11) Jones. Though atomically thin, the hybrid SnS2 photodetector, benefiting from local surface plasmonic resonance, achieves an excellent photoelectric performance that is not usually possible with a pristine SnS2-only device.