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Modeling of evolution process of edge over erosion in copper CMP using frequency components algorithm

机译:使用频率分量算法建模铜CMP中腐蚀侵蚀的进化过程

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In this paper, the causes of edge over erosion (EOE) in copper CMP are investigated. Wafer patterns containing square-wave features with pattern density of 50% and line width of 0.18??m, 0.5??m, 1??m and 2??m are studied. Under same polishing condition, the evolution processes of edge over erosion of the four different pattern structures are simulated by using frequency components algorithm (linear system method). The wafer profiles of the four pattern structures during polishing processes are given. It is seen that the values of EOE, erosion and dishing are different with different line width of the pattern. The results of the simulation of EOE, erosion and dishing are compared with the experimental data. Conclusions are given.
机译:本文研究了铜CMP中腐蚀(EOE)的边缘的原因。晶片图案包含方波特征,图案密度为50%,线宽为0.18Ωm,0.5Ωm,m,m和2 ?? m。在相同的抛光条件下,通过使用频率分量算法(线性系统方法)模拟四种不同图案结构的边缘过度侵蚀的进化过程。给出了抛光过程中的四个图案结构的晶片轮廓。可以看出,eoe,侵蚀和凹陷的值与图案的不同线宽不同。将EOE,侵蚀和凹陷模拟的结果与实验数据进行比较。结论是给出的。

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