首页> 外文会议>China Semiconductor Technology International Conference >A concise and precise model of the gate delay for EDA simulation
【24h】

A concise and precise model of the gate delay for EDA simulation

机译:EDA仿真的栅极延迟的简洁精确模型

获取原文

摘要

This paper considers the relationship between the static gate delay and the supply voltage of the digital integrated circuit. An empirical equation with physical implication is proposed for calculating the static gate delay. The expression of the gate delay is very simple. It contains only three constants. The calculation includes only one subtraction step, one division step and one addition step. Transistor level simulations are performed to verify the equation. The model matches the experiment results precisely. It is valid for various technologies, gate types, and operation temperatures. The equation can be applied in EDA tools to simulate the timing of the circuit under the PVT variation and the electromagnetic interference.
机译:本文考虑了静态栅极延迟与数字集成电路的电源电压之间的关系。提出了一种具有物理含义的经验方程来计算静态栅极延迟。栅极延迟的表达式非常简单。它只包含三个常数。该计算仅包括一个减法步骤,单划分步骤和一个添加步骤。执行晶体管级模拟以验证等式。该模型精确地匹配实验结果。它适用于各种技术,门类型和操作温度。该等式可以应用于EDA工具,以模拟PVT变化和电磁干扰下的电路的定时。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号