Practical wafer Level Threshold Voltage Stability measurement methodology for the fast evaluation of Flash technology

摘要

Package Level Threshold Voltage Stability (VTS) evaluation on PMOS has emerged as one of the critical reliability concerns in deep sub-micron devices. In this paper, we present a novel method to fast measure VTS at wafer level. Our result shows that changing the Source/Drain IMP species can improve the VTS of a 0.13um Flash.