Fin bending mechanism investigation for 14nm FinFET technology

摘要

Beyond 14nm logical technologies, Fin structure becomes one of the common features and the most balance solution to improve MOSFET performance. Fin structure benefits electrical characteristics due to its narrow and tall properties, but it also easily suffers unwanted mechanical failure due to high aspect ratio. One of these typical mechanical failures, named fin bending, usually occurs during STI formation because of stress problem. This paper will discuss the possible factors and demonstrate the mechanism.