An accurate scalable model for 700V LDMOS

摘要

This paper discusses a highly scalable model of 700V LDMOS (Lateral Diffused MOS) device. The device model includes several key steps like self-heating characterization, parasitic resistance removing and dimension scalability. A SUBCKT approach is presented for accurate modeling of some special effects, such as quasi-saturation and gate/junction capacitance. The proposed model is validated by measurement data of HHGrace 0.5um 700V BCD technology.