Development of a radiation-hardened standard cell library for 65nm CMOS technology

摘要

We have developed a radiation-hardened standard cell library for space applications based on the commercial 65nm CMOS technology process. The standard cells are designed using some radiation-hardened (RH) techniques, and the effects of these RH approaches have been validated. Also this 65nm CMOS RH standard cell library has been characterized to support the verilog to GDSII design flow, and the designed radiation tolerant features of this library are: TID > 500 Krad(Si), SEL > 100 MeV cm2/mg, SEU > 37 MeV cm2/mg.