Influence of Negative DIBL Effect on MOSFET Effective Drive Current and CMOS Circuit

摘要

In this study, the influence of the negative DIBL (NDIBL) effect of a negative capacitance nanowire filed-effect-transistor (negative capacitance (NC) NWFET) on MOSFET effective drive current (Ieff) and CMOS circuit performance were analyzed by employing a custom-built SPICE model. The Ieff of NC NWFET increased by ~12% due to NDIBL effect. A 7-stage ring oscillator was simulated to analyze the CMOS circuit energy-delay, and it shown that significant delay reduction, at iso-energy and iso-area, can be achieved due to NDIBL effect of NC NWFET. A 6T SRAM cell was investigated, and enhanced hold and read static noise margins (SNM) are achieved due to NDIBL effect. Moreover, several methods of increasing NDIBL effect were proposed.