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Mechanism B I-V Symmetry for MIM Capacitors Used in Microelectronics

机译:微电子中使用的MIM电容器的机制B I-V对称性

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摘要

The I-V characteristics of MIM capacitors tend to be asymmetrical. However, the I-V characteristics of MIM capacitors can sometimes be symmetrical because of two different mechanisms: Mechanism A and Mechanism B. For high-k MIM capacitors with ultrathin high-k dielectric, Mechanism B is the more likely mechanism.
机译:MIM电容器的I-V特性往往是不对称的。 然而,由于两种不同的机制

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