IDT Structure Optimization Design based on ALN/SI Substrate for Saw Devices

摘要

In this work, aluminum nitride (A1N) film with good piezoelectric properties was grown on the silicon (Si) substrate as piezoelectric layer, and the properties of surface acoustic wave (SAW) devices with different interdigital transducer (IDT) structures were researched by using Rectangle function, Hanning function and Kaiser function. MATLAB and e-LINE plus software were used to generate layout files quickly and accurately. Devices with 300nm finger width were tested at room temperature and the results indicated that devices with Kaiser function structure show better resonant waveforms, the center frequency was up to 4.94GHz, the inhibition degree of sidelobe increased obviously to 43.53dB, and insertion loss was -5.87dB. This work play an active role in the design and research of high performance surface acoustic wave devices.