HIGH-BRIGHTNESS NITRIDE-BASED LIGHT EMITTING DEVICES WITH LARGE AREA AND CAPABILITY USING ALUMINUM NITRIDE (ALN)-BASED SUPPORTING SUBSTRATE LAYERS

摘要

A structure for light emitting device and a method for fabricating a light emitting device is provided to prevent deformation or disassembly of a nitride-based semiconductor layer due to caused by thermal and mechanical deformation in a laser irradiation process. A nitride-based sacrificial layer or a nitride-based semiconductor layer including the nitride-based sacrificial layer and a nitride-based flattening layer is stacked on a sapphire substrate(20) as an insulating growth substrate. A supporting substrate layer(30) is formed on the sapphire. A nitride-based light emitting structure includes a nucleation layer/un-doped buffering nitride-based layer/N-type nitride-based cladding layer/P-type nitride-based cladding layer or a nucleation layer/un-doped buffering nitride-based layer/first tunnel junction layer/N-type nitride-based cladding layer/multi-quantum well nitride-based active layer/P-type nitride-based cladding layer or a nucleation layer/un-doped buffering nitride-based layer/N-type nitride-based cladding layer/P-type nitride-based cladding layer/second tunnel junction layer or a nucleation layer/un-doped buffering nitride-based layer/first tunnel junction layer/M-type nitride-based cladding layer/multi-quantum well nitride-based active layer/P-type nitride-based cladding layer/second tunnel junction layer.