HIGH-BRIGHTNESS NITRIDE-BASED LIGHT EMITTING DEVICES WITH LARGE AREA AND CAPABILITY USING REFRACTORY SUPPORTING SUBSTRATE LAYERS

摘要

The invention high brightness light emitting device (high-brightness nitride-based light emitting device) and a method of manufacturing the related such, high brightness light emitting device has a large area of ​​the light emitting portion (light emitting area) and high-capacity as large injection current ( is performed by the injection current). According to the high-luminance light emitting device and its manufacturing method according to the present invention, using a laser beam to remove the sapphire laser lift-off technique (laserlift - off: LLO) method to combine it for nitride semiconductors (nitride-based semiconductor) as consisting of high-quality nitride-based light emitting structure, a sapphire (sapphire) growth substrate upper to grow to before the nitride-based sacrificial layer (nitride-based sacrificial layer ), nitride-based planarizing layer (nitride-based flattening layer), and a refractory support substrate layer (refractory supporting substrate layer) sequentially stacked, wherein a refractory supporting substrate layer upper in the nitride-based semiconductor of the configured quality of the nitride grow-based light emitting structure by sequentially. Nitride-based light emitting structure growth during the buffer (buffering layer) acts as a frozen dopdeu nitride layer (un-doped nitride-based layer) and an N-type nitride-based cladding layer (N-type nitride-based cladding layer) between the first tunneljunction layer (first tunnel junction layer) or the uppermost layer of the P-type nitride-based cladding layer (P-type nitride-based cladding layer) upper to the second tunneljunction layer (second tunnel junction layer) introduced by laminating and then, the laser beam a using laser liftoff technique to remove the sapphire (laserlift - off: LLO) method can produce a large area of high quality and high capacity gohwi also nitride-based light emitting device by grafting. According to the present invention, the conventional laser lift off (LLO) technique is combined with the nitride-based light emitting device process and may otherwise prevent deformation or decomposed in the nitride-based semiconductor thin film resulting from strong energy causes thermal and mechanical strain during the laser irradiation not only there, the N-type and P-type nitride-based cladding N-type is formed on top of the layer and the P-type high transparency or high to dramatically improve the electrical and optical properties of the reflective ohmic contact layer excellent current of the light emitting device - the voltage (current-voltage), and light to improve the brightness (brightness) characteristics. In addition, external light emission efficiency (extraction quantum efficiency: EQE) to improve to order the introduction of surface roughness (surface roughness) process and the photonic crystal effects (photonic crystal effect) the nitride-based cladding layer and the ohmic contact layer, the upper and lower parts in a very easily applied to to produce a high brightness light emitting device having a large area and a large capacity can be provided for the next generation of white light source. ; High-brightness light emitting device, a refractory supporting substrate layer, a tunnel junction layer, a laser lift-off, the photonic crystal effects