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MULTI-PARAMETRIC GROWTH OF SEMICONDUCTOR NANOWIRES IN A SINGLE PLATFORM BY LASER-INDUCED LOCALIZED HEAT SOURCES

机译:激光诱导的局部热源在单平台上半导体纳米线的多参数生长

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Nanoscale-synthesized materials hold grgat promise for the realization of future generation devices. In order to fulfill the exceptional promise, new techniques must be developed that will enable the precise layout and assembly of the heterogeneous components into functional 'superblocks'. As one promising route to this end, rapid and spatially confined heating capability of laser irradiation has enabled precisely controlled nucleation and subsequent direct growth of nanowires at an arbitrary local region based on vapor-liquid-solid (VLS) mechanism. Spatial confinement of the nanowire growth region via focused laser beam illumination provides a convenient way to examine multiple growth parameters (temperature, time, illumination direction, and composition), thereby elucidating fundamental nanowires growth mechanisms. Furthermore, the work demonstrates an advanced method for direct synthesis of nanostructures for the purpose of practical rapid patterning including on demand multi-bandgap materials based nanowires.
机译:纳米级合成材料有望实现下一代设备。为了实现无与伦比的承诺,必须开发新技术,以使异类组件能够精确地布局和组装成功能性的“超级块”。作为实现这一目标的一种有前途的途径,基于蒸汽-液体-固体(VLS)机理,激光辐照的快速和空间受限的加热能力已使精确控制的成核作用和随后纳米线在任意局部区域的直接生长成为可能。通过聚焦激光束照射对纳米线生长区域进行空间限制,提供了一种检查多种生长参数(温度,时间,照射方向和组成)的便捷方法,从而阐明了基本的纳米线生长机理。此外,该工作展示了一种用于直接合成纳米结构的先进方法,目的是进行实用的快速构图,包括根据需要的基于多带隙材料的纳米线。

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