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Welding of Semiconductor Nanowires by Coupling Laser-Induced Peening and Localized Heating

机译:激光诱导喷丸与局部加热耦合的半导体纳米线焊接

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摘要

We demonstrate that laser peening coupled with sintering of CdTe nanowire films substantially enhances film quality and charge transfer while largely maintaining basic particle morphology. During the laser peening phase, a shockwave is used to compress the film. Laser sintering comprises the second step, where a nanosecond pulse laser beam welds the nanowires. Microstructure, morphology, material content, and electrical conductivities of the films are characterized before and after treatment. The morphology results show that laser peening can decrease porosity and bring nanowires into contact, and pulsed laser heating fuses those contacts. Multiphysics simulations coupling electromagnetic and heat transfer modules demonstrate that during pulsed laser heating, local EM field enhancement is generated specifically around the contact areas between two semiconductor nanowires, indicating localized heating. The characterization results indicate that solely laser peening or sintering can only moderately improve the thin film quality; however, when coupled together as laser peen sintering (LPS), the electrical conductivity enhancement is dramatic. LPS can decrease resistivity up to a factor of ~10,000, resulting in values on the order of ~105 Ω-cm in some cases, which is comparable to CdTe thin films. Our work demonstrates that LPS is an effective processing method to obtain high-quality semiconductor nanocrystal films.
机译:我们证明,激光喷丸与CdTe纳米线薄膜的烧结相结合,可以大大提高薄膜质量和电荷转移,同时基本保持基本的颗粒形态。在激光喷丸阶段,使用冲击波压缩薄膜。激光烧结包括第二步,其中纳秒级脉冲激光束焊接纳米线。在处理之前和之后表征膜的微观结构,形态,材料含量和电导率。形态结果表明,激光喷丸可以降低孔隙率并使纳米线接触,而脉冲激光加热则使这些接触融合。耦合电磁模块和传热模块的多物理场仿真表明,在脉冲激光加热期间,特别是在两条半导体纳米线之间的接触区域周围产生了局部EM场增强,表明发生了局部加热。表征结果表明,仅激光喷丸或烧结只能适度地改善薄膜质量。但是,当通过激光喷头烧结(LPS)耦合在一起时,电导率会显着提高。 LPS可以将电阻率降低约10,000倍,在某些情况下可导致约10 5 Ω-cm的值,这与CdTe薄膜相当。我们的工作表明,LPS是获得高质量半导体纳米晶体薄膜的有效处理方法。

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