Analysis of Contact Resistance Effect on Performance of Organic Thin Film Transistors

摘要

This paper proposes an analytical model for the bottom gate structure comprising contacts at above the semiconductor and/or insulator layer in organic thin film transistor (OTFT) on the basis of contact resistance effect. These devices suffer from limitations such as contact resistance, low mobility regions and low mobility of charge carriers. In lieu of that, contact resistance and contact effect are demonstrated by two-dimensional device simulation. The current equations are derived from linear to saturation regime by considering overlapping region among the contacts, active layer, and effective channel between the contacts. To validate the proposed analytical model a comparative analysis is carried out with the device simulation and experimental results and observed a good agreement.