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A Process Variation Tolerant Low Contention Keeper Design for Wide Fan-In Dynamic OR Gate

机译:宽扇入动态或门的耐过程变化低争用保持器设计

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Register file structures in modern microprocessors usually employ wide fan-in dynamic CMOS OR gates. Weak keepers have been traditionally used to resolve the low noise margin problem of dynamic CMOS design. Scaling trends and process variation issues in CMOS design have reduced the effectiveness of this weak PMOS keeper. On the other hand large sized PMOS keeper used in wide fan-in dynamic OR gate results in contention between the pull down network (PDN) and the keeper. As a consequence of contention there is an unnecessary increase in power dissipation and loss in performance. In this paper a process variation tolerant wide fan-in dynamic OR gate with a new keeper design is proposed which is capable of reducing the contention between the keeper and PDN and hence capable of reducing the power dissipation and delay. Simulation results at 50nm shows that the power dissipation and delay have been reduced by 40% and 35% respectively as compared to the wide fan-in dynamic OR gate with conventional keeper under different levels of process variation.
机译:现代微处理器中的寄存器文件结构通常采用宽扇入动态CMOS或门。传统上,弱保持器已用于解决动态CMOS设计的低噪声容限问题。 CMOS设计中的缩放趋势和工艺变化问题降低了这种脆弱的PMOS保持器的有效性。另一方面,在宽扇入动态或门中使用的大型PMOS保持器会导致下拉网络(PDN)与保持器之间发生争用。作为竞争的结果,功率消耗和性能损失会不必要地增加。本文提出了一种具有新型保持器设计的宽容动态扇入动态“或”门,该保持器设计能够减少保持器与PDN之间的竞争,从而降低功耗和延迟。在50nm处的仿真结果表明,与在不同工艺变化水平下使用传统保持器的宽扇入动态或门相比,功耗和延迟分别降低了40%和35%。

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