Novel Carrier-Mobility Modeling with Interface States for MOSFETs with Highly Scaled Gate Oxide Based on First-Principles Calculations

摘要

We have performed the mobility modeling with interface states by considering optical phonon scattering associated with polarization. We have shown, for the first time, that the inelastic optical phonon scattering reproduces well the experimental mobility-lowering component associated with interface states. We have also found that hydrogen-termination method does not improve the mobility degradation associated with interface states due to polarization of hydrogen. Suppression of interface states is essential to avoid the mobility degradation.