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Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

机译：弯曲的门 - 全纳米线MOSFET：由于氧化诱导的拉伸应力，具有增强的载体迁移率的装置

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In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.

机译：在本文中，我们研究了弯曲的NW MOSFET中的应变引起的移动性增强。通过拉曼光谱法测量通过热氧化诱导的200MPa至2GPa的应力。通过拉曼光谱法测量悬浮的NW FET。观察到超过100％的流动性增强。与非弯曲结构相比，弯曲的性能增益在低现场条件下最为明显，低温。

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《IEEE International Electron Devices Meeting》|2007年||共4页
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K. E. Moselund; P. Dobrosz; S. Olsen; V. Pott; L. De Michielis; D. Tsamados; D. Bouvet; A. ONeill; A. M. Ionescu;
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中图分类 TP23-53;
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1. Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs [J] . M. Najmzadeh, L. De Michielis, D. Bouvet, Microelectronic Engineering . 2010,第5a8期

机译：具有横向单轴拉伸应力轮廓的硅纳米线，用于高电子迁移率全栅MOSFET
2. Time Evolution of DIBL in Gate-All-Around Nanowire MOSFETs During Hot-Carrier Stress [J] . Gupta Anshul, Gupta Charu, Veloso Anabela, IEEE Transactions on Electron Devices . 2021,第6期

机译：热载体应力期间栅极 - 全面纳米线MOSFET中DIBL的时间演变
3. Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering [J] . Ma J. W., Lee W. J., Bae J. M., Nano letters . 2015,第11期

机译：通过表面缺陷工程提高拉伸应变的Si和SiGe纳米线的载流子迁移率
4. Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress [C] . K. E. Moselund, P. Dobrosz, S. Olsen, IEEE International Electron Devices Meeting . 2007

机译：弯曲的门 - 全纳米线MOSFET：由于氧化诱导的拉伸应力，具有增强的载体迁移率的装置
5. Gate-All-Around Nanowire MOSFET for DNA Sequencing [D] . ?Islam, Mohammad Azharul 2020

机译：用于DNA测序的门 - 全部纳米线MOSFET
6. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs [O] . Jie Gu, Qingzhu Zhang, Zhenhua Wu, 2021

机译：P型门 - 全面硅纳米线MOSFET的低温传输特性
7. Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs [O] . M. Najmzadeh, L. De Michielis, D. Bouvet, 2010

机译：具有侧向单轴拉伸应力分布的硅纳米线，用于高电子移动栅极 - 全绕MOSFET

Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

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