Super-Scaled InP HBTs for 150 GHz Circuits

摘要

The development of InP heterojunction bipolar transistors (HBTs) with the emitter feature size less than 0.25 microns is described. The key technical challenges in scaling to this dimension are reviewed and the technology approaches are enumerated. The development of these super-scaled InP HBTs is expected to enable mixed signal circuits with clock speeds in excess of 100 GHz.