Misalignment-tolerated, Cu Dual Damascene Interconnects with Low-k SiOCH film by a Novel Via-first, Multi-Hard-Mask Process for sub-100nm-node, ASICs

摘要

Misalignment-tolerated, Cu dual damascene interconnects (DDI) are successfully obtained in the low-k SiOCH film (k=2.9) by a novel via-first multi-hard-mask (VF-MHM) process without via-poisoning of photo-resist. In the VF-MHM, the etching sequence has higher misalignment margin between the vias and the upper lines in the Cu DDI as compared with a conventional trench-first one (TF-MHM). The VF-MHM process improves the fabrication yield and TDDB reliability of Low-k/Cu-DDIs, and is a key scheme for sub-100nm-node, ASIC fabrication.