Excellent device performance of 3D In0.53Ga0.47As gate-wrap-around field-effect-transistors with high-k gate dielectrics

摘要

Excellent device performance of 3D In0.53Ga0.47As gate-wrap-around field-effect-transistors (GWAFETs) have been demonstrated by a novel device design with innovative fabrication processes. The study of the fabricated 3D In0.53Ga0.47As GWAFETs with fin width (Wfin) of 40 nm to 200 nm shows that the device with narrower Wfin exhibits higher drive current, transconductance and better short channel effect (SCE) control. A good combination of current drive and subthreshold characteristics has been achieved by the device with 40 nm Wfin and 140 nm Lg, and it delivers Ion of 600 μA/μm at Vd=1 V and Vg-Vth=1 V, subthreshold swing (SS) of 80 mV/dec, and drain induced barrier lowering (DIBL) of 20mV/V. The observed significant improvement in electrostatic control was achieved by our GWA device architecture.