High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation

机译：高速谐振腔增强型GE光电探测器在SI反射基板上进行1550nm操作

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We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.

机译：我们制造了高速谐振腔增强的GE-ON-SOI光电探测器，在1550nm下工作，并展示了12.8GHz的3 dB带宽。优化时，这些高速探测器应在1550nm处表现出75％的量子效率。

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《IEEE International Topical Meeting on Microwave Photonics》|2004年||共3页
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Dosunmu O.I.; Emsley M.K.; Unlu M.S.; Cannon D.D.; Kimerling L.C.;
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中图分类自动化技术、计算机技术;
关键词
photodetectors; infrared detectors; germanium; silicon-on-insulator; elemental semiconductors; optical communication equipment; resonant cavity enhanced photodetectors; Si reflecting substrates; Ge-on-SOI photodetectors; high-speed detectors; quantum efficiency; 1550 nm; 12.8 GHz; 75 percent; 3 dB; Ge; Si;

机译：光探测器;红外探测器;锗;绝缘体;元素半导体;光通信设备;谐振腔增强的光电探测器;Si反射基板;GE-ON-SOI光电探测器;量子效率;1550 nm;12.8 GHz;75％;3 dB;ge;si;

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专利

1. High-Speed Resonant Cavity Enhanced Ge Photodetectors on Reflecting Si Substrates for 1550-nm Operation [J] . Olufemi I. Dosunmu, Douglas D. Cannon, Matthew K. Emsley, IEEE Photonics Technology Letters . 2005,第1期

机译：反射硅基板上的高速谐振腔增强型Ge光电探测器，用于1550 nm操作
2. Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates [J] . Dosunmu O.I., Cannon D.D., Emsley M.K., IEEE journal of selected topics in quantum electronics . 2004,第4期

机译：谐振腔增强型Ge光电探测器，用于在反射Si衬底上进行1550 nm的操作
3. Back-illuminated silicon resonant cavity-enhanced photodetector at 1550 nm [J] . Casalino M, Sirleto L, Moretti L, Physica, E. Low-dimensional systems & nanostructures . 2009,第6期

机译：1550 nm的背照式硅谐振腔增强光电探测器
4. High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation [C] . Dosunmu, O.I., Emsley, . 2004

机译：用于1550 nm的Si反射衬底上的高速谐振腔增强Ge光电探测器
5. Resonant cavity enhanced (RCE) techniques for increasing the efficiency of quantum well photodetectors. [D] . Kim, Jang Pyo. 2006

机译：共振腔增强（RCE）技术可提高量子阱光电探测器的效率。
6. Fast Purcell-enhanced single photon source in 1550-nm telecom band from a resonant quantum dot-cavity coupling [O] . Muhammad Danang Birowosuto, Hisashi Sumikura, Shinji Matsuo, -1

机译：通过共振量子点-腔耦合在1550-nm电信频段中快速增强赛尔增强的单光子源
7. Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates [O] . Olufemi I. Dosunmu, Student Member, Douglas D. Cannon, 2004

机译：谐振腔增强Ge光电探测器，用于反射si衬底上的1550nm操作

High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation

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