High speed resonant cavity enhanced Ge photodetectors on Si reflecting substrates for 1550 nm operation

摘要

We have fabricated high-speed resonant-cavity-enhanced Ge-on-SOI photodetectors, operating at 1550 nm and demonstrating a 3 dB bandwidth of 12.8 GHz. When optimized, these high-speed detectors should exhibit a quantum efficiency of 75% at 1550 nm.