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Liquid-free, piezoresistive, SOI-based pressure sensor for high temperature measurements up to 400 #x00B0;C

机译:基于SOI的无液压阻SOI压力传感器,适用于高达400°C的高温测量

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In this paper a novel liquid-free, piezoresistive pressure sensor on SOI-basis (Silicon On Insulator) for high temperature applications is presented. The sensor is capable of measuring pressures at temperature up to 400 °C (constant load) with an accuracy of 0.25 % FSO (Full Scale Output). Media separation is realized using a steel membrane. A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the centerboss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by DRIE (Deep Reactive Ion Etching or Bosch Process). Novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used. Thereby, avoiding chip movement, optimal push rod load transmission is ensured. The housing consists of different sections optimized for compensation of CTE (Coefficient of Thermal Expansion) mismatches. Utilizing this novel packaging scheme and combining different housing materials, temperature, wear, and long term fatigue stability are assured.
机译:在本文中,提出了一种基于SOI的新型无液压阻式压力传感器(绝缘体上的硅),用于高温应用。该传感器能够在高达400°C(恒定负载)的温度下测量压力,精度为0.25%FSO(满量程输出)。使用钢膜可以实现介质分离。推杆(安装在钢膜上)将施加的压力直接传递到SOI芯片的中心凸膜,该中心凸膜放置在陶瓷载体上。芯片膜通过DRIE(深度反应离子蚀刻或Bosch工艺)实现。使用了一种新颖的带芯片的壳体,该壳体采用了滑动传感器芯片,该传感器芯片在包装过程中通过推杆的机械预紧而固定。由此,避免切屑移动,确保了最佳的推杆载荷传递。外壳由不同部分组成,这些部分针对CTE(热膨胀系数)失配进行了优化。使用这种新颖的包装方案并结合不同的外壳材料,可以确保温度,磨损和长期疲劳稳定性。

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