首页> 外文会议>Conference on optical microlithography XXV >Gradient-based resolution enhancement optimization methods based on vector imaging model
【24h】

Gradient-based resolution enhancement optimization methods based on vector imaging model

机译:基于矢量图像模型的基于梯度的分辨率增强优化方法

获取原文
获取外文期刊封面目录资料

摘要

Recently, a set of gradient-based optical proximity correction (OPC) and phase shifting mask (PSM) optimizationmethods have been developed to solve for the inverse lithography problem under scalar imaging models, which areonly accurate for numerical apertures (NA) less than approximately 0.4. However, as the lithography technologynode enters the 45nm realm, immersion lithography systems with hyper-NA (NA&1) are now extensively usedin the semiconductor industry. For the hyper-NA lithography systems, the vector nature of the electromagneticfield must be taken into account, leading to the vector imaging models. Thus, the OPC and PSM optimizationapproaches developed under the scalar imaging models are inadequate to enhance the resolution in the immersionlithography systems. This paper focuses on developing gradient-based OPC and PSM optimization algorithmsunder vector imaging models. The mask optimization framework is first formulated, in which the imagingprocess of the optical lithography system is represented by an integrative and analytic vector imaging model.The steepest descent algorithm is then used to optimize the mask iteratively. Subsequently, a generalized waveletpenalty (GWP) is proposed to improve the manufacturability of the mask, and results in smaller pattern errorsand CD errors than the traditional wavelet penalty (WP). Finally, a set of algorithm acceleration techniques areexploited to speed up the proposed algorithms.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
机译:最近,已开发出一套基于梯度的光学邻近校正(OPC)和相移掩模(PSM)优化方法来解决标量成像模型下的反光刻问题,这些方法仅对数值孔径(NA)小于约0.4才准确。然而,随着光刻技术节点进入45nm领域,具有超NA(NA> 1)的浸没式光刻系统现在在半导体工业中被广泛使用。对于超NA光刻系统,必须考虑电磁场的矢量性质,从而导致矢量成像模型。因此,在标量成像模型下开发的OPC和PSM优化方法不足以增强浸没式光刻系统中的分辨率。本文着重研究矢量成像模型下基于梯度的OPC和PSM优化算法。首先制定了掩模优化框架,其中以集成和解析矢量成像模型表示光学光刻系统的成像过程,然后使用最速下降算法迭代地优化掩模。随后,提出了一种通用的小波罚分法(GWP),以提高掩模的可制造性,并且与传统的小波罚分法(WP)相比,可以产生更小的图案误差和CD误差。最后,利用了一组算法加速技术来加快所提出的算法的速度。©(2012)COPYRIGHT光电仪器工程师协会(SPIE)。摘要的下载仅允许个人使用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号