首页> 外文会议>Conference on optical microlithography XXV >Robust resolution enhancement optimization methods to process variations based on vector imaging model
【24h】

Robust resolution enhancement optimization methods to process variations based on vector imaging model

机译:基于矢量成像模型的鲁棒分辨率增强优化方法来处理变化

获取原文
获取外文期刊封面目录资料

摘要

Optical proximity correction (OPC) and phase shifting mask (PSM) are the most widely used resolution enhancementtechniques (RET) in the semiconductor industry. Recently, a set of OPC and PSM optimizationalgorithms have been developed to solve for the inverse lithography problem, which are only designed for thenominal imaging parameters without giving sufficient attention to the process variations due to the aberrations,defocus and dose variation. However, the effects of process variations existing in the practical optical lithographysystems become more pronounced as the critical dimension (CD) continuously shrinks. On the other hand, thelithography systems with larger NA (NA&0.6) are now extensively used, rendering the scalar imaging modelsinadequate to describe the vector nature of the electromagnetic field in the current optical lithography systems.In order to tackle the above problems, this paper focuses on developing robust gradient-based OPC and PSMoptimization algorithms to the process variations under a vector imaging model. To achieve this goal, an integrativeand analytic vector imaging model is applied to formulate the optimization problem, where the effectsof process variations are explicitly incorporated in the optimization framework. The steepest descent algorithmis used to optimize the mask iteratively. In order to improve the efficiency of the proposed algorithms, a set ofalgorithm acceleration techniques (AAT) are exploited during the optimization procedure.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
机译:光学邻近校正(OPC)和相移掩模(PSM)是半导体行业中使用最广泛的分辨率增强技术(RET)。近年来,已经开发了一套OPC和PSM优化算法来解决反光刻问题,该算法仅设计用于标称成像参数,而没有充分关注由于像差,散焦和剂量变化而引起的工艺变化。然而,随着临界尺寸(CD)的不断缩小,在实际的光刻系统中存在的工艺变化的影响变得更加明显。另一方面,现在广泛使用具有较大NA(NA> 0.6)的光刻系统,使得标量成像模型不足以描述当前光学光刻系统中的电磁场的矢量性质。论文着重于针对矢量图像模型下的过程变化开发鲁棒的基于梯度的OPC和PSM优化算法。为了实现此目标,应用了集成和解析矢量成像模型来制定优化问题,在此过程中,将过程变化的影响明确纳入了优化框架。最陡下降算法用于迭代优化蒙版。为了提高所提出算法的效率,在优化过程中采用了一组算法加速技术(AAT)。©(2012)COPYRIGHT光电仪器工程师协会(SPIE)。摘要的下载仅允许个人使用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号