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Measurement of through silicon via etch profile by dark-field optical microscope

机译:暗场光学显微镜对硅通孔蚀刻轮廓的测量

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Currently there are no in-line TSV (through silicon via) etch profile metrology tools suitable for use in high volumemanufacturing. Cross-section SEM analysis can be utilized for process development, but it is a destructive technique.In our research, a da
机译:当前,没有适用于大批量生产的在线TSV(硅直通)蚀刻轮廓计量工具。横截面SEM分析可用于工艺开发,但这是一种破坏性技术。

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