Sensitivity analysis of line-edge roughness measured by means of scatterometry: a simulation-based investigation

机译：通过散射法测量线边缘粗糙度的灵敏度分析：基于仿真的研究

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Various reports state that LER/LWR has a significant impact on lithography-fabricated ICs, rendering it desirableto be able to determine the LER in-line so that it never exceeds certain specified limits.In our simulation work we deal with the challenge of

机译：各种报告说明LER / LWR对金刻制造的IC产生重大影响，渲染它Desirableto能够在线确定LER，使其永远不会超过某些指定的限制。我们的模拟工作我们处理的挑战

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《Conference on metrology, inspection, and process control for microlithography XXVI》|2012年|P.0J.1-0J.9|共9页
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Bartosz Bilski; Karsten Frenner; Wolfgang Osten;
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中图分类光刻、掩膜;光刻、掩膜;
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1. Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature Sensitivity [J] . Hu V. P.-H., Fan M.-L., Su P., Emerging and Selected Topics in Circuits and Systems, IEEE Journal on . 2011,第3期

机译：考虑线边缘粗糙度，功函数变化和温度敏感性的超薄SOI亚阈值SRAM分析
2. Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I–Modeling and Simulation Method [J] . Jiang X., Wang R., Yu T., IEEE Transactions on Electron Devices . 2013,第11期

机译：纳米CMOS技术中线边缘粗糙度（LER）和线宽粗糙度（LWR）的研究：第一部分–建模和仿真方法
3. Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability [J] . Wang R., Jiang X., Yu T., IEEE Transactions on Electron Devices . 2013,第11期

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4. Investigation of an enhanced 2D Field-Stitching Method as a simulation-tool for Line-Edge Roughness in scatterometry [C] . Bartosz Bilski, Karsten Frenner, Wolfgang Osten Optical micro- and nanometrology III . 2010

机译：作为散射工具中线边缘粗糙度的仿真工具的增强型2D场拼接方法的研究
5. Mask Roughness Induced Line-Edge Roughness in Extreme Ultraviolet Lithography [D] . McClinton, Brittany 2011

机译：极紫外光刻中掩模的粗糙度引起的线边缘粗糙度
6. Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation [O] . Juhae Park, Sung-Gyu Lee, Yannick Vesters, 2019

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7. An effective modeling framework for the analysis of interconnects subject to line-edge roughness [O] . Manfredi Paolo, Vande Ginste Dries, De Zutter Daniël 2015

机译：一种有效的建模框架，用于分析受边缘粗糙度影响的互连

Sensitivity analysis of line-edge roughness measured by means of scatterometry: a simulation-based investigation

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