Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow

摘要

We have extended the compact model HiSIM_HV valid for the DMOS structure by considering the vertical 2D current flow. The resistance in the drift region is modeled in the way how the depletion width spread according to the current injected into the darin contact. The model includes an additional fitting parameter. Accuracy of the developed model has been verified with 2D-device simulation results. Predictability of the model is demonstrated.