Electron dynamical tunneling in the systems of double quantum dots and rings

摘要

Semiconductor heterostructures as quantum dots (QD) or quantum rings (QR) demonstrate discrete atom-like energy level structure. In the case of double QD (DQD) or double concentric QR (DCQR), a single electron spectrum is composed as a set of quasi-doublets. We study influence of these specific spectrum properties on electron tunneling which is related to the electron transport through DQD (DCQR). The double InAs/GaAs QDs (QRs) are considered within the single sub-band effective approach. The whole spectrum of the single electron is calculated for two and three dimensional quantum objects. We considered two type of dynamical tunneling in DQD. The first is related to tunneling in the system of two identical QDs; the second one occurs in the system of non-identical QDs. We study the effect of symmetry violation of DQD (DQR), the shape geometry on tunneling and show that violation of symmetry creates difficulties for tunneling.