METHOD FOR PRODUCING AN ELECTRONIC COMPONENT WITH DOUBLE QUANTUM DOTS

摘要

A process for fabricating an electronic component incorporating double quantum dots and split gates includes providing a substrate surmounted with a stack of a semiconductor layer and of a dielectric layer that is formed above the semiconductor layer. The process also includes forming a mask on the dielectric layer and etching the dielectric layer and the semiconductor layer with the pattern of the mask, so as to form a stack of a semiconductor nanowire and of a dielectric hard mask. Finally, the process includes depositing a gate material on all the wafer and carrying out a planarization, until the dielectric hard mask is reached, so as to form first and second gates that are electrically insulated from each other on either side of said nanowire.