Terahertz plasma oscillations in Corbino field-effect transistors

摘要

Semiconductors whose plasma frequency falls in the terahertz range are attractive candidates for THz generation and detection. A mechanism of plasma-wave instability was suggested by Dyakonov and Shur [1] who noticed that plasma waves in the channel of a field-effect transistor (FET) can become unstable when propagating between the transistor's contacts.